1n914 1N914A 1n914b page: 1 frontier electronics corp. 667 e. cochran street, simi valley, ca 93065 tel: (805) 522-9998 fax: (805) 522-9989 e-mail: frontiersales@frontierusa.com web: http://www.frontierusa.com silicon epitaxial planar diode 1n914 1N914A 1n914b features z fast switching z small body mechanical data z case glass, do35, dimensions in inches and (millimeters) z leads solderable per mil-std-202, method 208 z polarity cathode indicated by color band z weight 0.13 grams ratings symbol 1n914 1N914A 1n914b units reverse voltage v r 75 v peak reverse voltage v rm 100 v rectified current (average) half wave rectification with resist load at t amb =25 oc and 50hz. i o 75 ma surge forward current at t < 1 s and t j =25 oc i fsm 500 ma power dissipation at t amb =25 oc p tot 500 mw junction temperature t j 200 oc storage temperature range t s - 55 to + 200 oc electrical characteristics (a t t a =25 c unless otherwise noted) characteristics symbol min typ max units forward voltage at i f =10ma ( 1n914 ) forward voltage at i f =20ma ( 1N914A ) forward voltage at i f =100ma ( 1n914b ) v f - - 1 v leakage current at v r =20v at v r =75v at v r =20v t j =150 oc i r i r i r - - - - - - 25 5 50 na a a reverse breakdown voltage tested with 100 a pulses v r 100 - - v capacitance at v f =v r =0 c tot - - 4 pf voltage rise when switching on tested with 50ma forward pulses tp=0.1 s rise time 30ns f p =50 to 100 khz v fr - - 2.5 v reverse recovery time from i f =10ma to i r =1ma v r =6v r l =100 t rr - - 4 ns thermal resistance function to amblent air r tha - - 0.35 k / mw rectification efficiency at f=100 mhz v rf =2v n v 0.45 - - - 0.52 ? 27.5 min 1.9 ? ?
1n914 1N914A 1n914b page: 1 fig. 1-admissible repetitive peak forw ard current versus pulse duration a 100 5 4 3 2 10 5 4 3 2 1 5 4 3 2 0.1 10 -5 2 5 10 -4 2 5 10 -3 2 5 10 -2 2 5 10 -1 2 5 1 2 5 10 s tp i frm =0 0.1 0.2 0.5 =tp/t t=1/ fp tp i frm i t t fig. 4-admissible power dissipation versus ambient temperature valid provided that leads at a distance of 8mm from case are ke p t at ambient tem p erture mw 1000 900 800 700 600 500 400 300 200 100 0 ptot 0 100 200oc tamb tj=25 o c f=1khz fig. 5-relative capacitance versus reverse voltage 0 2 4 6 8 10 v r 1.1 1.0 0.9 0.8 0.7 ctot(v r ) ctot(0v) 10 -2 10 -1 1 10 10 2 ma i f 10 4 5 2 10 3 5 2 10 2 5 2 10 5 2 1 fig. 3-dynamic forward resistance versus forward curren t tj=25 o c f=1khz r f tj=100 o c fig. 2-forward characteristics 10 3 10 2 10 1 10 -1 10 -2 i f 0 1 2 v f tj=25 o c ma
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